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Renesas Electronics

9 months ago

Staff Engineer - GaN Discrete Device Design

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Company information

Company
Renesas Electronics
Location
India, Karnataka, Bangalore India
Posted
9 months ago
View all jobs at Renesas Electronics

Job description

Job Description The Staff Engineer will play a key role in the Device and Product Group, supporting the development and introduction of state-of-the-art GaN semiconductor devices. This position requires deep expertise in discrete power electronic device design, advanced TCAD simulation, and layout. The role is highly cross-functional, involving collaboration with R&D, design, epitaxy, fabrication, assembly, test, and reliability teams. Key Responsibilities Device Design: Work with marketing and system engineering to define and specify GaN discrete device requirements. Lead the design and simulation of GaN discrete power devices, optimizing performance, reliability, and manufacturability. Perform device design trade-off studies, considering various performance metrics, such as breakdown voltage, on-resistance, switching speed, and gate charge. Utilize TCAD simulation tools (e.g., Silvaco, COMSOL, Sentaurus) to model device behavior and optimize device performance. Develop and maintain device models for circuit simulation. Layout Design: Perform layout of GaN discrete power devices, ensuring optimal performance and manufacturability. Collaborate with layout engineers to implement designs. Process Integration: Collaborate with process engineers to optimize device fabrication processes. Collaborate with epitaxy engineers to optimize epitaxial layer structures. Characterization and Validation: Develop and execute device characterization plans. Analyze device performance data and provide feedback to the design and process teams. Support device qualification and reliability testing. Documentation: Create and maintain detailed technical documentation, including design specifications, simulation reports, and test results. Requirements Bachelor's or Master's degree in Electrical Engineering, Materials Science, or a related field. 8+ years of experience in discrete power semiconductor device design and development. Deep understanding of GaN device physics and fabrication processes. Proficiency in TCAD simulation tools (e.g., Silvaco, COMSOL, Sentaurus). Experience with device layout tools (e.g., Cadence Virtuoso). Strong analytical and problem-solving skills. Excellent communication and teamwork skills. Experience with device characterization and testing. Experience with reliability testing. Benefits Competitive salary and benefits package. Opportunity to work on cutting-edge GaN technology. Collaborative and innovative work environment. Professional development opportunities. Location: [Insert Location]

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